IXFR24N90P

new-10%

Manufacturer part number:IXFR24N90P

Manufacturer:IXYS

Description:MOSFET N-CH 900V 13A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR24N90P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	HiPerFET™, PolarP2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED, AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	230W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	460m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	13A
Drain-source On Resistance-Max	0.46Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	900V
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	ROHS3 Compliant