IRFB3507

join

new-10%

Manufacturer part number:IRFB3507

Manufacturer:Infineon Technologies

Description:IRFB3507 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFB3507 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	190W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.8m Ω @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3540pF @ 50V
Current - Continuous Drain (Id) @ 25°C	97A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	Non-RoHS Compliant

IRFB3507 Description

IRFB3507 MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRFB3507 IC gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of IRFB3507 circuit, it is suitable for high-current applications as well as for normal applications.

IRFB3507 Features

Surface mount
Available in tape and reel
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements

IRFB3507 Applications

PFC
server/telecom power
FPD TV power
ATX power
Industrial power

The IRFB3507 can be used for general purposes and is suitable for high current applications.