IRFB4110PBF

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IRFB4110PBF

Manufacturer part number:IRFB4110PBF

Manufacturer:Infineon Technologies

Description:IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFB4110PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	180A
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	370W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Rise Time	67ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	88 ns
Turn-Off Delay Time	78 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0045Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	670A
Dual Supply Voltage	100V
Recovery Time	75 ns
Nominal Vgs	4 V
Height	16.51mm
Length	10.66mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free