STP20N90K5                Description

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

STP20N90K5                Features

? Industry’s lowest RDS(on) x area

? Industry’s best FoM (figure of merit)

? Ultra-low gate charge

? 100% avalanche tested

? Zener-protected

STP20N90K5          Applications

? Switching applications