Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SPD04N50C3ATMA1

SPD04N50C3ATMA1

SPD04N50C3ATMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 950mOhm @ 2.8A, 10V ±20V 470pF @ 25V 22nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

SPD04N50C3ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2005
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Current Rating 4.5A
Number of Elements 1
Power Dissipation-Max 50W Tc
Power Dissipation 50W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Input Capacitance 470pF
Drain to Source Resistance 850mOhm
Rds On Max 950 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.68191 $1.36382
5,000 $0.64782 $3.2391
12,500 $0.62346 $7.48152
SPD04N50C3ATMA1 Product Details

SPD04N50C3ATMA1 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 470pF @ 25V.This device has a continuous drain current (ID) of [4.5A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.MOSFETs have 850mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

SPD04N50C3ATMA1 Features


a continuous drain current (ID) of 4.5A
the turn-off delay time is 70 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


SPD04N50C3ATMA1 Applications


There are a lot of Infineon Technologies
SPD04N50C3ATMA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News