Name: IRL3102S
Brand: Infineon Technologies
SKU: IRL3102S
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	89W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 37A, 7V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 15V
Current - Continuous Drain (Id) @ 25°C	61A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 7V
Vgs (Max)	±10V
RoHS Status	Non-RoHS Compliant

IRL3102S Product Details

IRL3102S Description

These HEXFET Power MOSFETs were created with the requirement of CPU core DC-DC converters in mind. Advanced processing processes, along with an optimized gate oxide design, produce in a die that is scaled to provide optimal efficiency at the lowest possible cost.

The D2Pak is a surface mount power package that can fit die up to HEX-4 in size. It has the highest power capabilities and the lowest onresistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and may dissipate up to 2.0W in a typical surface mount installation.