Name: NTP45N06L
Brand: ON Semiconductor
SKU: NTP45N06L
Availability: InStock

new-10%

NTP45N06L

Manufacturer part number:NTP45N06L

Manufacturer:ON Semiconductor

Description:NTP45N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTP45N06L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	45A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.4W Ta 125W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 22.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Ta
Gate Charge (Qg) (Max) @ Vgs	32nC @ 5V
Rise Time	341ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	158 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	45A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.028Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	150A
Avalanche Energy Rating (Eas)	240 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

NTP45N06L Product Details

IRFU9120NPBF Description

IRFU9120NPBF is a -100v HEXFET? Power MOSFET. The HEXFET IRFU9120NPBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.