IRFB4332PBF

new-10%

Manufacturer part number:IRFB4332PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 250V 60A TO-220AB

Case Package:SOT-23

Datasheet:IRFB4332PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	33MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Current Rating	60A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	390W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	60A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Dual Supply Voltage	250V
Recovery Time	290 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	5 V
Height	19.8mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free