IRFSL4127PBF

new-10%

Manufacturer part number:IRFSL4127PBF

Manufacturer:Infineon Technologies

Description:MOSFET,200V,76A,23.2 MOHM,100 NC QG,TO-262

Case Package:SOT-23

Datasheet:IRFSL4127PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	22MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5380pF @ 50V
Current - Continuous Drain (Id) @ 25°C	72A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	18ns
Fall Time (Typ)	22 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	72A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	250 mJ
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free