STP40NF10L

new-10%

Manufacturer part number:STP40NF10L

Manufacturer:STMicroelectronics

Description:STP40NF10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP40NF10L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	33MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	40A
Base Part Number	STP40N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 5V
Rise Time	82ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±17V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	1.7V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	17V
Drain to Source Breakdown Voltage	100V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free