IRFBA1404P Description

Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This MOSFET also has a junction operating temperature of 175 oC, quick switching times, and better robustness in single- and repeated-avalanche situations. The Super-220 TM is a package that can accommodate a significantly larger silicon die while maintaining the same mechanical form and pinout as the industry standard TO-220. As a result, the TO-220 and the much larger TO-247 packages both have significantly improved current handling capabilities.

IRFBA1404P Features

• Advanced Process Technology

• Ultra Low On-Resistance

• Increase Current Handling Capability

• 175°C Operating Temperature

• Fast Switching

• Dynamic dv/dt Rating

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

IRFBA1404P Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial