IRFBA1404PPBF

new-10%

Manufacturer part number:IRFBA1404PPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 206A SUPER-220

Case Package:SOT-23

Datasheet:IRFBA1404PPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-273AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.7MOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Current Rating	206A
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.7m Ω @ 95A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	206A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	206A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	95A
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	650A
Avalanche Energy Rating (Eas)	480 mJ
Height	15mm
Length	10.9982mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free