IRFH5020TR2PBF

new-10%

Manufacturer part number:IRFH5020TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 5.1A 8VQFN

Case Package:SOT-23

Datasheet:IRFH5020TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	55MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	8.3W
Turn On Delay Time	9.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2290pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.1A Ta
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	7.7ns
Drain to Source Voltage (Vdss)	200V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	43A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	2.29nF
Recovery Time	69 ns
Drain to Source Resistance	55mOhm
Rds On Max	55 mΩ
Nominal Vgs	5 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free