STD5NK52ZD-1

new-10%

Manufacturer part number:STD5NK52ZD-1

Manufacturer:STMicroelectronics

Description:MOSFET N Ch 520V 1.22 Ohm 4.4A

Case Package:SOT-23

Datasheet:STD5NK52ZD-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.22Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.4A Tc
Gate Charge (Qg) (Max) @ Vgs	16.9nC @ 10V
Rise Time	13.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	23.1 ns
Continuous Drain Current (ID)	4.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	520V
Pulsed Drain Current-Max (IDM)	17.6A
Avalanche Energy Rating (Eas)	170 mJ
RoHS Status	ROHS3 Compliant