SI4632DY-T1-E3

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Manufacturer part number:SI4632DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 25V 40A 8-SOIC

Case Package:SOT-23

Datasheet:SI4632DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.5W Ta 7.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11175pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	161nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	27A
Drain-source On Resistance-Max	0.0033Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	70A
Avalanche Energy Rating (Eas)	45 mJ
RoHS Status	ROHS3 Compliant