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SI4632DY-T1-E3

SI4632DY-T1-E3

SI4632DY-T1-E3

Vishay Siliconix

MOSFET N-CH 25V 40A 8-SOIC

SOT-23

SI4632DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11175pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Rise Time 69ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 45 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $1.27710 $2.5542

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