IRFH5210TR2PBF

new-10%

Manufacturer part number:IRFH5210TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 10A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5210TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	14.9MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Rise Time	9.7ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	2.57nF
Recovery Time	44 ns
Drain to Source Resistance	14.9mOhm
Rds On Max	14.9 mΩ
Nominal Vgs	2 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free