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IRFH5250DTR2PBF

IRFH5250DTR2PBF

IRFH5250DTR2PBF

Infineon Technologies

MOSFET N-CH 25V 40A 8VQFN

SOT-23

IRFH5250DTR2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 250W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6115pF @ 13V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Rise Time 72ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 706pF
Recovery Time 41 ns
Drain to Source Resistance 2.2mOhm
Rds On Max 1.4 mΩ
Nominal Vgs 1.8 V
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.696518 $0.696518
10 $0.657093 $6.57093
100 $0.619899 $61.9899
500 $0.584810 $292.405
1000 $0.551708 $551.708

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