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IRFH5250TR2PBF

IRFH5250TR2PBF

IRFH5250TR2PBF

Infineon Technologies

MOSFET N-CH 25V 45A PQFN

SOT-23

IRFH5250TR2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Digi-Reel®
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Power Dissipation 3.6W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7174pF @ 13V
Current - Continuous Drain (Id) @ 25°C 45A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 46ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 2.93nF
Recovery Time 41 ns
Drain to Source Resistance 1.75mOhm
Rds On Max 1.15 mΩ
Nominal Vgs 1.8 V
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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