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TPC8031-H(TE12LQM)

TPC8031-H(TE12LQM)

TPC8031-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

SOT-23

TPC8031-H(TE12LQM) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation 1.9W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 3.9 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.15nF
Drain to Source Resistance 13.3mOhm
Rds On Max 13.3 mΩ
RoHS Status RoHS Compliant

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