CSD17305Q5A

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CSD17305Q5A

Manufacturer part number:CSD17305Q5A

Manufacturer:Texas Instruments

Description:MOSFET 30V N Channel NexFET Power MOSFET

Case Package:SOT-23

Datasheet:CSD17305Q5A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17305
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	8.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 30A, 8V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	29A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	18.3nC @ 4.5V
Rise Time	16.5ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	7.9 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.0054Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	304 mJ
Nominal Vgs	1.1 V
Length	4.9mm
Width	6mm
Thickness	1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead