IRFH5301TR2PBF

new-10%

Manufacturer part number:IRFH5301TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 35A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5301TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6) Single Die
Packaging	Cut Tape (CT)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	1.85MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	5114pF @ 15V
Current - Continuous Drain (Id) @ 25°C	35A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	78ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	5.114nF
Recovery Time	36 ns
Drain to Source Resistance	1.85mOhm
Rds On Max	1.85 mΩ
Nominal Vgs	1.8 V
Height	810μm
Length	5mm
Width	6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free