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IRFZ48NSPBF

IRFZ48NSPBF

IRFZ48NSPBF

Infineon Technologies

IRFZ48NSPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFZ48NSPBF Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
IRFZ48NSPBF Product Details

IRFZ48NSPBF Description


The IRFZ48NSPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The Infineon IRFZ48NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.



IRFZ48NSPBF Features


  • Advanced Process Technology

  • Surface Mount (IRFZ48NS)

  • Low-profile through-hole (IRFZ48NL)

  • 175??C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-free



IRFZ48NSPBF Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


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