IXFK30N100Q2

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IXFK30N100Q2

Manufacturer part number:IXFK30N100Q2

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 30A TO-264

Case Package:SOT-23

Datasheet:IXFK30N100Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	10mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	400mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	735W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	735W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	186nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	60 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	120A
Dual Supply Voltage	1kV
Avalanche Energy Rating (Eas)	4000 mJ
Nominal Vgs	5 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free