IRFH5302TRPBF

new-10%

Manufacturer part number:IRFH5302TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 50A, 10V ±20V 4400pF @ 15V 76nC @ 10V 8-PowerVDFN

Case Package:SOT-23

Datasheet:IRFH5302TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	2.1MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 100W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Rise Time	51ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	400A
Nominal Vgs	1.8 V
Height	838.2μm
Length	5.9944mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free