NVMFS5834NLT3G

new-10%

Manufacturer part number:NVMFS5834NLT3G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 40V 14A 8-Pin SO-FL T/R

Case Package:SOT-23

Datasheet:NVMFS5834NLT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.6W Ta 107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1231pF @ 20V
Current - Continuous Drain (Id) @ 25°C	14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	56.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.6 ns
Turn-Off Delay Time	17.4 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	276A
Avalanche Energy Rating (Eas)	48 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free