IRFH7110TRPBF

new-10%

Manufacturer part number:IRFH7110TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N CH 100V 11A PQFN 5X6

Case Package:SOT-23

Datasheet:IRFH7110TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TQFN Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	3.6W Ta 104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.5m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Pulsed Drain Current-Max (IDM)	240A
Nominal Vgs	3 V
Height	1.17mm
Length	5.85mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant