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IRFHM4226TRPBF

IRFHM4226TRPBF

IRFHM4226TRPBF

Infineon Technologies

MOSFET N CH 25V 28A PQFN

SOT-23

IRFHM4226TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.2MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.7W Ta 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 13V
Current - Continuous Drain (Id) @ 25°C 28A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.1 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 420A
Height 900μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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