SI7156DP-T1-E3

new-10%

Manufacturer part number:SI7156DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 40V 50A 83W 3.5mohm @ 10V

Case Package:SOT-23

Datasheet:SI7156DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	5.4W Ta 83W Tc
Element Configuration	Single
Power Dissipation	5.4W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 20V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	32ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	6.9nF
Drain to Source Resistance	3.5mOhm
Rds On Max	3.5 mΩ
RoHS Status	ROHS3 Compliant