IRFI4212H-117P

new-10%

Manufacturer part number:IRFI4212H-117P

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 100V 11A TO-220FP-5

Case Package:SOT-23

Datasheet:IRFI4212H-117P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5 Full Pack
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	72.5MOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	18W
Terminal Position	SINGLE
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	18W
Case Connection	ISOLATED
Turn On Delay Time	4.7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	72.5m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	8.3ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	4.3 ns
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	41 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	54 ns
FET Feature	Standard
Nominal Vgs	5 V
Height	9.02mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free