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IRFP22N50APBFXKMA1

  • IRFP22N50APBFXKMA1
  • IRFP22N50APBFXKMA1

IRFP22N50APBFXKMA1

IRFP22N50APBFXKMA1

Infineon Technologies

PLANAR >= 100V

SOT-23

IRFP22N50APBFXKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 277W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
400 $4.99608 $1998.432

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