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IRFP22N50APBFXKMA1

IRFP22N50APBFXKMA1

IRFP22N50APBFXKMA1

Infineon Technologies

PLANAR >= 100V

SOT-23

IRFP22N50APBFXKMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
Series HEXFET®
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 277W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:3449 items

Pricing & Ordering

QuantityUnit PriceExt. Price
400$4.99608$1998.432

About IRFP22N50APBFXKMA1

The IRFP22N50APBFXKMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features PLANAR >= 100V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFP22N50APBFXKMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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