IRFP2907PBF

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IRFP2907PBF

Manufacturer part number:IRFP2907PBF

Manufacturer:Infineon Technologies

Description:IRFP2907PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP2907PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	4.5MOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC	75V
Technology	MOSFET (Metal Oxide)
Current Rating	209A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	470W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	470W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	209A Tc
Gate Charge (Qg) (Max) @ Vgs	620nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	209A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	90A
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	840A
Dual Supply Voltage	75V
Recovery Time	210 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	24.99mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free