SUD35N10-26P-T4GE3

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Manufacturer part number:SUD35N10-26P-T4GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 35A TO252

Case Package:SOT-23

Datasheet:SUD35N10-26P-T4GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8.3W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 12V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	7V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	35A
JEDEC-95 Code	TO-252AA
Drain-source On Resistance-Max	0.026Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	55 mJ
RoHS Status	ROHS3 Compliant