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IRFP90N20DPBF

IRFP90N20DPBF

IRFP90N20DPBF

Infineon Technologies

IRFP90N20DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFP90N20DPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2001
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23mOhm
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 94A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 580W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 580W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 79 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 94A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Recovery Time 340 ns
Nominal Vgs 5 V
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.07000 $7.07
10 $6.35800 $63.58
100 $5.28710 $528.71
500 $4.35940 $2179.7
1,000 $3.74096 $3.74096
IRFP90N20DPBF Product Details

IRFP90N20DPBF Description

 

Channel MOSFET IRFP90N20DPBF is a kind of MOSFET, in which the channel of MOSFET is composed of most electrons as current carriers. When the MOSFET is activated and turned on, most of the current flowing is the electrons that pass through the channel.

 

IRFP90N20DPBF  Features


Low Gate-to-Drain Charge to Reduce Switching Losses

Fully Characterized Capacitance Including Effective Coss to Simplify Design,(See App.Note AN1001)

Fully Characterized Avalanche Voltage and Current

 

IRFP90N20DPBF  Applications


electrons

 

 




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