IRFP90N20DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFP90N20DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Published
2001
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
23mOhm
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
94A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
580W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
580W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 56A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6040pF @ 25V
Current - Continuous Drain (Id) @ 25°C
94A Tc
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
79 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
94A
Threshold Voltage
5V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
90A
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Recovery Time
340 ns
Nominal Vgs
5 V
Height
20.3mm
Length
15.875mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.07000
$7.07
10
$6.35800
$63.58
100
$5.28710
$528.71
500
$4.35940
$2179.7
IRFP90N20DPBF Product Details
IRFP90N20DPBF Description
Channel MOSFET IRFP90N20DPBFis a kind of MOSFET, in which the channel of MOSFET is composed of most electrons as current carriers. When the MOSFET is activated and turned on, most of the current flowing is the electrons that pass through the channel.
IRFP90N20DPBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective Coss to Simplify Design,(See App.Note AN1001)