IRFPS37N50APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFPS37N50APBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Supplier Device Package
SUPER-247™ (TO-274AA)
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
HEXFET®
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
36A
Power Dissipation-Max
446W Tc
Power Dissipation
446W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
130mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5579pF @ 25V
Current - Continuous Drain (Id) @ 25°C
36A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
98ns
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
36A
Drain to Source Breakdown Voltage
500V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.36000
$9.36
25
$7.67440
$191.86
100
$6.92570
$692.57
500
$5.80262
$2901.31
IRFPS37N50APBF Product Details
IRFPS37N50APBF Description
The P-Channel Power MOSFET includes the P-Channel MOSFET-12V family, which is ideal for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters and low-voltage drive applications.
IRFPS37N50APBF Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFS5116PLWF ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant