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MMIX1T660N04T4

  • MMIX1T660N04T4
  • MMIX1T660N04T4

MMIX1T660N04T4

MMIX1T660N04T4

IXYS

DISC MSFT SMPD PKG-HIPERFETMSFT

SOT-23

MMIX1T660N04T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case 24-PowerSMD, 21 Leads
Operating Temperature -55°C~175°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 830W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850μ Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 44000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 660A Tc
Gate Charge (Qg) (Max) @ Vgs 860nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $21.52000 $21.52
500 $21.3048 $10652.4
1000 $21.0896 $21089.6
1500 $20.8744 $31311.6
2000 $20.6592 $41318.4
2500 $20.444 $51110

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