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2N6661-2

2N6661-2

2N6661-2

Vishay Siliconix

Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD

SOT-23

2N6661-2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 725mW Ta 6.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 725mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 860mA Tc
Drain to Source Voltage (Vdss) 90V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 860mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.86A
DS Breakdown Voltage-Min 90V
Height 6.6mm
Length 9.4mm
Width 8.15mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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