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IRFR12N25D

  • IRFR12N25D
  • IRFR12N25D

IRFR12N25D

IRFR12N25D

Infineon Technologies

IRFR12N25D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR12N25D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 144W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 260m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
300 $2.03500 $610.5
IRFR12N25D Product Details

IRFR12N25D Description


IRFR12N25D is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 250V. The operating temperature of the IRFR12N25D is -55°C~175°C TJ and its maximum power dissipation is 144W Tc. IRFR12N25D has 3 pins and it is available in Tube packaging way.



IRFR12N25D Features


  • Low Gate-to-Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including

  • Effective COSS to Simplify Design, (See App. Note AN1001)

  • Fully Characterized Avalanche Voltage and Current


IRFR12N25D Applications


  • High frequency DC-DC converters


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