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IRFR12N25DPBF

IRFR12N25DPBF

IRFR12N25DPBF

Infineon Technologies

IRFR12N25DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR12N25DPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 260Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Number of Elements 1
Power Dissipation-Max 144W Tc
Power Dissipation 144W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 14A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Input Capacitance 810pF
Rds On Max 260 mΩ
Nominal Vgs 5 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.376560 $0.37656
10 $0.355244 $3.55244
100 $0.335137 $33.5137
500 $0.316166 $158.083
1000 $0.298270 $298.27
IRFR12N25DPBF Product Details


IRFR12N25DPBF Features

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current



IRFR12N25DPBF Applications

 High-frequency DC-DC converters

 Lead-Free



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