IRF640LPBF

new-10%

Manufacturer part number:IRF640LPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 18A TO-262

Case Package:SOT-23

Datasheet:IRF640LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262-3
Weight	2.387001g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 130W Tc
Element Configuration	Single
Power Dissipation	130W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	51ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.3nF
Drain to Source Resistance	180mOhm
Rds On Max	180 mΩ
Height	9.65mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant