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IRFR13N20DTRRP

IRFR13N20DTRRP

IRFR13N20DTRRP

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

SOT-23

IRFR13N20DTRRP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Input Capacitance 830pF
Drain to Source Resistance 235mOhm
Rds On Max 235 mΩ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant

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