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RJK0301DPB-WS#J0

RJK0301DPB-WS#J0

RJK0301DPB-WS#J0

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m Ω @ 30A, 10V +16V, -12V 5000pF @ 10V 32nC @ 10V 30V SC-100, SOT-669

SOT-23

RJK0301DPB-WS#J0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 65W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +16V, -12V
RJK0301DPB-WS#J0 Product Details

RJK0301DPB-WS#J0 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5000pF @ 10V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

RJK0301DPB-WS#J0 Features


a 30V drain to source voltage (Vdss)


RJK0301DPB-WS#J0 Applications


There are a lot of Renesas Electronics America
RJK0301DPB-WS#J0 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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