SI4398DY-T1-GE3

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Manufacturer part number:SI4398DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 19A 8-SOIC

Case Package:SOT-23

Datasheet:SI4398DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Power Dissipation	1.6W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5620pF @ 10V
Current - Continuous Drain (Id) @ 25°C	19A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	5.62nF
Drain to Source Resistance	2.8mOhm
Rds On Max	2.8 mΩ
RoHS Status	ROHS3 Compliant