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IRFR220NPBF

  • IRFR220NPBF
  • IRFR220NPBF

IRFR220NPBF

IRFR220NPBF

Infineon Technologies

IRFR220NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR220NPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 43W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
IRFR220NPBF Product Details

IRFR220NPBF Description


IRFR220NPBF is an N-channel Power MOSFET transistor form the manufacturer Infineon Technologies with a drain to source voltage of 200V. The operating temperature of the IRFR220NPBF is -55??C~175??C TJ and its maximum power dissipation is 43W Tc. IRFR220NPBF has 2 pins and it is available in Tube packaging way.



IRFR220NPBF Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

  • Fully Characterized Avalanche Voltage and Current



IRFR220NPBF Applications


  • High frequency DC-DC converters

  • Lead-Free


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