IRFR220NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR220NPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
43W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
600m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:3201 items
IRFR220NPBF Product Details
IRFR220NPBF Description
IRFR220NPBF is an N-channel Power MOSFET transistor form the manufacturer Infineon Technologies with a drain to source voltage of 200V. The operating temperature of the IRFR220NPBF is -55??C~175??C TJ and its maximum power dissipation is 43W Tc. IRFR220NPBF has 2 pins and it is available in Tube packaging way.
IRFR220NPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR220NPBF Applications
High frequency DC-DC converters
Lead-Free
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