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IRFR24N15DPBF

IRFR24N15DPBF

IRFR24N15DPBF

Infineon Technologies

IRFR24N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR24N15DPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 140W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.87000 $1.87
10 $1.65200 $16.52
100 $1.30560 $130.56
500 $1.01252 $506.26
1,000 $0.79937 $0.79937
IRFR24N15DPBF Product Details

IRFR24N15DPBF Description

 

IRFR24N15DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRFR24N15DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRFR24N15DPBF has the common source configuration.

 

 

IRFR24N15DPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRFR24N15DPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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