IRFR24N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR24N15DPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
140W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
95m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
890pF @ 25V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.87000
$1.87
10
$1.65200
$16.52
100
$1.30560
$130.56
500
$1.01252
$506.26
1,000
$0.79937
$0.79937
IRFR24N15DPBF Product Details
IRFR24N15DPBF Description
IRFR24N15DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRFR24N15DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRFR24N15DPBF has the common source configuration.