STP200NF04L

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Manufacturer part number:STP200NF04L

Manufacturer:STMicroelectronics

Description:STP200NF04L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP200NF04L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Current Rating	120A
Base Part Number	STP200
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	37 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 4.5V
Rise Time	270ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	120A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	480A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free