IRFD010PBF

new-10%

Manufacturer part number:IRFD010PBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 50V 1.7A 4-DIP

Case Package:SOT-23

Datasheet:IRFD010PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	111 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	200mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1W Tc
Power Dissipation	1W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200mOhm @ 860mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	1.7A
Threshold Voltage	4V
Drain to Source Breakdown Voltage	50V
Input Capacitance	250pF
Drain to Source Resistance	200mOhm
Rds On Max	200 mΩ
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free