Description

The IRFR3706 is a 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.

Features

• Ultra-Low Gate Impedance

• Very Low RDS(on) at 4.5V VGS

• Fully Characterized Avalanche Voltage and Current

• Maximum junction temperature (TJ(max))

• Continuous drain current (ID)

• Safe operating area (SOA)

Applications

• High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

• High-Frequency Buck Converters for Computer Processor Power

• Power-Over-Ethernet (PoE)

• Solar inverters

• Automotive applications