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IRFR540ZTRRPBF

IRFR540ZTRRPBF

IRFR540ZTRRPBF

Infineon Technologies

MOSFET N-CH 100V 35A DPAK

SOT-23

IRFR540ZTRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 91W Tc
Element Configuration Single
Power Dissipation 91W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 42ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.69nF
Drain to Source Resistance 28.5mOhm
Rds On Max 28.5 mΩ
Height 2.26mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant

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