IRFS4227PBF

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IRFS4227PBF

Manufacturer part number:IRFS4227PBF

Manufacturer:Infineon Technologies

Description:IRFS4227PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS4227PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Case Connection	DRAIN
Turn On Delay Time	33 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 46A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	62A Tc
Gate Charge (Qg) (Max) @ Vgs	98nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	62A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.026Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	260A
Dual Supply Voltage	240V
Recovery Time	150 ns
Nominal Vgs	5 V
Height	4.826mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free