IRFS5615PBF

new-10%

Manufacturer part number:IRFS5615PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 33A D2PAK

Case Package:SOT-23

Datasheet:IRFS5615PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	144W Tc
Power Dissipation	144W
Turn On Delay Time	8.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	42mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 50V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	23.1ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13.1 ns
Turn-Off Delay Time	17.2 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Input Capacitance	1.75nF
Drain to Source Resistance	42mOhm
Rds On Max	42 mΩ
Height	4.826mm
Length	10.668mm
Width	9.652mm
Radiation Hardening	No
RoHS Status	RoHS Compliant